JPH0586677B2 - - Google Patents

Info

Publication number
JPH0586677B2
JPH0586677B2 JP58157975A JP15797583A JPH0586677B2 JP H0586677 B2 JPH0586677 B2 JP H0586677B2 JP 58157975 A JP58157975 A JP 58157975A JP 15797583 A JP15797583 A JP 15797583A JP H0586677 B2 JPH0586677 B2 JP H0586677B2
Authority
JP
Japan
Prior art keywords
layer
solar cell
sih
film
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58157975A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6050972A (ja
Inventor
Micha Kamyama
Yoshuki Uchida
Hiroshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58157975A priority Critical patent/JPS6050972A/ja
Publication of JPS6050972A publication Critical patent/JPS6050972A/ja
Publication of JPH0586677B2 publication Critical patent/JPH0586677B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP58157975A 1983-08-31 1983-08-31 薄膜太陽電池 Granted JPS6050972A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58157975A JPS6050972A (ja) 1983-08-31 1983-08-31 薄膜太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58157975A JPS6050972A (ja) 1983-08-31 1983-08-31 薄膜太陽電池

Publications (2)

Publication Number Publication Date
JPS6050972A JPS6050972A (ja) 1985-03-22
JPH0586677B2 true JPH0586677B2 (en]) 1993-12-13

Family

ID=15661513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58157975A Granted JPS6050972A (ja) 1983-08-31 1983-08-31 薄膜太陽電池

Country Status (1)

Country Link
JP (1) JPS6050972A (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
JPH0799777B2 (ja) * 1986-03-27 1995-10-25 住友電気工業株式会社 非晶質半導体素子
JPH0232569A (ja) * 1988-07-22 1990-02-02 Mitsubishi Electric Corp アモルファス太陽電池
JP5219538B2 (ja) * 2008-02-12 2013-06-26 大成建設株式会社 太陽光発電薄膜を基材に直接形成した太陽電池

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217148A (en) * 1979-06-18 1980-08-12 Rca Corporation Compensated amorphous silicon solar cell
JPS56150876A (en) * 1980-04-24 1981-11-21 Sanyo Electric Co Ltd Photovoltaic device

Also Published As

Publication number Publication date
JPS6050972A (ja) 1985-03-22

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